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Freescale Semiconductor Technical Data
Document Number: MRFG35002N6A Rev. 1, 12/2008
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB Customer Premise Equipment (CPE) applications. * Typical Single - Carrier W - CDMA Performance: VDD = 6 Volts, IDQ = 65 mA, Pout = 158 mWatts Avg., 3550 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain -- 10 dB Drain Efficiency -- 26.5% ACPR @ 5 MHz Offset -- - 42 dBc in 3.84 MHz Channel Bandwidth * 1.5 Watts P1dB @ 3550 MHz, CW Features * Excellent Phase Linearity and Group Delay Characteristics * High Gain, High Efficiency and High Linearity * RoHS Compliant * In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
MRFG35002N6AT1
3.5 GHz, 1.5 W, 6 V POWER FET GaAs PHEMT
CASE 466 - 03, STYLE 1 PLD - 1.5 PLASTIC
Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage RF Input Power Storage Temperature Range Channel Temperature
(1)
Symbol VDSS VGS Pin Tstg Tch
Value 8 -5 22 - 65 to +150 175
Unit Vdc Vdc dBm C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Symbol RJC Value (2) 13.7 Unit C/W
1. For reliable operation, the operating channel temperature should not exceed 150C. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2007, 2008. All rights reserved.
MRFG35002N6AT1 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1C (Minimum) A (Minimum) IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 1 Package Peak Temperature 260 Unit C
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Saturated Drain Current (VDS = 3.5 Vdc, VGS = 0 Vdc) Off State Leakage Current (VGS = - 0.4 Vdc, VDS = 0 Vdc) Off State Drain Current (VDS = 6 Vdc, VGS = - 2.5 Vdc) Off State Current (VDS = 28.5 Vdc, VGS = - 2.5 Vdc) Gate - Source Cut - off Voltage (VDS = 3.5 Vdc, IDS = 8.7 mA) Quiescent Gate Voltage (VDS = 6 Vdc, ID = 65 mA) Symbol IDSS IGSS IDSO IDSX VGS(th) VGS(Q) Min -- -- -- -- - 1.2 - 1.1 Typ 1.7 < 1.0 -- < 1.0 - 0.95 - 0.85 Max -- 100 600 9 - 0.7 - 0.6 Unit Adc Adc Adc mAdc Vdc Vdc
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 6 Vdc, IDQ = 65 mA, Pout = 158 mW Avg., f = 3550 MHz, Single - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Adjacent Channel Power Ratio Gps hD ACPR 8.5 23 -- 10 26.5 - 42 -- -- - 38 dB % dBc
Typical RF Performance (In Freescale Test Fixture, 50 ohm system) VDD = 6 Vdc, IDQ = 65 mA, f = 3550 MHz Pout @ 1 dB Compression Point, CW P1dB -- 1.5 -- W
MRFG35002N6AT1 2 RF Device Data Freescale Semiconductor
C8 VBIAS C13 C12 C11 C10 C9 C7
C18 VSUPPLY C17 C19 C16 C15 C14
R1 C20 C6 C5 C22 Z6 Z11 Z1 C1 C3 C4 C23 Z2 Z3 Z4 Z5 Z7 Z8 Z9 Z10 Z12 Z13 C24 Z14 C21
RF INPUT
RF OUTPUT
Z1, Z14 Z2 Z3 Z4 Z5 Z6, Z11 Z7
0.044 0.044 0.044 0.468 0.468 0.015 0.031
x 0.125 x 0.481 x 0.076 x 0.025 x 0.341 x 0.549 x 0.259
Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip
Z8 Z9 Z10 Z12 Z13 PCB
0.420 x 0.150 Microstrip 0.150 x 0.068 Microstrip 0.290 x 0.183 Microstrip 0.044 x 0.291 Microstrip 0.044 x 0.808 Microstrip Rogers 4350, 0.020, r = 3.5
Figure 1. MRFG35002N6A Test Circuit Schematic Table 6. MRFG35002N6A Test Circuit Component Designations and Values
Part C1, C24 C2 C3 C4 C5, C6, C21, C22 C7, C20 C8, C19 C9, C18 C10, C17 C11, C16 C12, C15 C13, C14 C23 R1 Not used 1.2 pF Chip Capacitor 0.7 pF Chip Capacitor 5.6 pF Chip Capacitors 10 pF Chip Capacitors 100 pF Chip Capacitors 100 pF Chip Capacitors 1000 pF Chip Capacitors 0.01 F Chip Capacitors 39K pF Chip Capacitors 10 F Chip Capacitors 0.2 pF Chip Capacitor 100 , 1/4 W Chip Resistor 08051J1R2BBS 08051J0R7BBS 08051J5R6BBS ATC100A100JT500XT ATC100A101JT500XT ATC100B101JT500XT ATC100B102JT50XT ATC200B103KT50XT ATC200B393KT50XT GRM55DR61H106KA88B 08051J0R2BBS CRCW12061000FKEA AVX AVX AVX ATC ATC ATC ATC ATC ATC Murata AVX Vishay Description 13 pF Chip Capacitors Part Number ATC100A130JT500XT Manufacturer ATC
MRFG35002N6AT1 RF Device Data Freescale Semiconductor 3
C13
C12
C11
C10
C9 C8 C7 R1 C5 C6
C18
C17
C16
C15
C14
C19 C20
C22
C21
C1
C2
C3 C4
C23
C24
MRFG35002N6A Rev. 3
Figure 2. MRFG35002N6A Test Circuit Component Layout
MRFG35002N6AT1 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
14 12 Gps, POWER GAIN (dB) 10 Gps 8 6 4 2 14 16 18 20 22 24 26 28 Pout, OUTPUT POWER (dBm) 30 20 10 0 VDD = 6 Vdc, IDQ = 65 mA, f = 3550 MHz Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) 60 50 40 D, DRAIN EFFICIENCY (%) D, DRAIN EFFICIENCY (%) IRL, INPUT RETURN LOSS (dB)
D
Figure 3. Single - Channel W - CDMA Power Gain and Drain Efficiency versus Output Power
ACPR, ADJACENT CHANNEL POWER RATIO (dBc) 0 VDD = 6 Vdc, IDQ = 65 mA, f = 3550 MHz Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) 0
-10
-5
-20 IRL -30
-10
-15
-40 ACPR -50 14 16 18 20 22 24 26 28 Pout, OUTPUT POWER (dBm)
-20
-25
Figure 4. Single - Channel W - CDMA Adjacent Channel Power Ratio and IRL versus Output Power
14 12 Gps, POWER GAIN (dB) 10 8 6 4 2 3450 VDD = 6 Vdc, IDQ = 65 mA, Pout = 158 mW Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) Gps 36 34 32 30 28 26 24 3650
D
3500
3550 f, FREQUENCY (MHz)
3600
Figure 5. Single - Channel W - CDMA Power Gain and Drain Efficiency versus Frequency NOTE: Data is generated from the test circuit shown. MRFG35002N6AT1 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
ACPR, ADJACENT CHANNEL POWER RATIO (dBc) 0 VDD = 6 Vdc, IDQ = 65 mA, Pout = 158 mW Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) 0 -5 IRL, INPUT RETURN LOSS (dB) D, DRAIN EFFICIENCY (%)
-10
-20 IRL -30
-10
-15
-40 ACPR -50 3400 3450 3500 3550 3600 3650
-20
-25 3700
f, FREQUENCY (MHz)
Figure 6. Single - Channel W - CDMA Adjacent Channel Power Ratio and IRL versus Frequency
-5 EVM, ERROR VECTOR MAGNITUDE (dB) -10 -15 -20 -25 -30 -35 14 16 18 EVM 20 22 24 26 28 VDD = 6 Vdc, IDQ = 65 mA, f = 3550 MHz Single-Carrier OFDM 802.16d, 64 QAM 3/4 7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF 60 50 40 30 20 10 0
D
Pout, OUTPUT POWER (dBm)
Figure 7. Single - Channel OFDM Error Vector Magnitude and Drain Efficiency versus Output Power
NOTE: Data is generated from the test circuit shown.
MRFG35002N6AT1 6 RF Device Data Freescale Semiconductor
Table 7. Common Source S - Parameters (VDD = 6 Vdc, IDQ = 65 mA, TC = 25C, 50 Ohm System)
f MHz 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 1550 1600 1650 1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2200 2250 2300 2350 2400 2450 2500 2550 2600 2650 2700 2750 S11 |S11| 0.910 0.911 0.911 0.911 0.910 0.910 0.910 0.910 0.910 0.910 0.909 0.910 0.910 0.909 0.910 0.909 0.908 0.907 0.907 0.907 0.906 0.904 0.903 0.903 0.903 0.902 0.902 0.901 0.901 0.902 0.901 0.901 0.901 0.906 0.900 0.900 0.899 0.898 0.899 0.897 0.896 0.896 0.893 0.894 0.891 0.891 - 175.1 - 176.9 - 178.5 - 179.9 178.8 177.7 176.6 175.7 174.9 174.2 173.4 172.7 172.1 171.4 170.8 170.1 169.5 168.8 168.1 167.2 166.3 163.0 162.2 161.3 160.5 159.8 158.9 158.1 157.4 156.6 155.9 155.1 154.3 153.3 152.8 151.9 151.0 150.2 149.3 148.4 147.4 146.5 145.4 144.5 143.4 142.4 |S21| 5.223 4.775 4.396 4.078 3.808 3.574 3.371 3.191 3.029 2.883 2.748 2.632 2.520 2.421 2.329 2.246 2.168 2.097 2.030 1.968 1.911 1.874 1.823 1.775 1.729 1.686 1.645 1.607 1.570 1.535 1.502 1.470 1.441 1.415 1.388 1.364 1.342 1.321 1.302 1.284 1.268 1.254 1.240 1.227 1.216 1.206 S21 82.8 80.9 79.1 77.4 75.7 74.0 72.5 70.9 69.4 67.9 66.3 65.0 63.5 62.0 60.6 59.2 57.8 56.4 54.9 53.5 52.0 50.4 49.0 47.6 46.2 44.7 43.3 41.9 40.5 39.1 37.7 36.3 34.9 33.5 32.0 30.6 29.2 27.7 26.2 24.8 23.3 21.8 20.2 18.7 17.2 15.6 |S12| 0.036 0.036 0.036 0.037 0.037 0.037 0.037 0.037 0.037 0.037 0.037 0.037 0.038 0.038 0.038 0.038 0.038 0.038 0.038 0.038 0.038 0.039 0.039 0.039 0.039 0.039 0.039 0.039 0.039 0.039 0.039 0.039 0.040 0.040 0.040 0.040 0.040 0.040 0.040 0.041 0.041 0.041 0.041 0.042 0.042 0.042 S12 0.0 - 1.2 - 2.3 - 3.3 - 4.4 - 5.3 - 6.2 - 7.1 - 7.8 - 8.7 - 9.5 - 10.3 - 11.0 - 11.9 - 12.6 - 13.3 - 14.1 - 14.9 - 15.4 - 16.4 - 17.1 - 18.0 - 18.8 - 19.6 - 20.5 - 21.0 - 21.8 - 22.5 - 23.3 - 24.1 - 24.9 - 25.6 - 26.5 - 27.2 - 28.1 - 28.7 - 29.6 - 30.3 - 31.4 - 32.1 - 33.2 - 34.1 - 34.8 - 35.6 - 36.7 - 37.4 |S22| 0.703 0.702 0.701 0.699 0.698 0.697 0.696 0.695 0.694 0.693 0.692 0.692 0.691 0.690 0.691 0.690 0.689 0.689 0.690 0.690 0.690 0.687 0.686 0.685 0.686 0.686 0.685 0.685 0.686 0.686 0.686 0.686 0.685 0.689 0.686 0.685 0.684 0.683 0.683 0.681 0.679 0.678 0.675 0.674 0.672 0.669 S22 - 176.6 - 177.9 - 179.1 179.6 178.5 177.3 176.1 175.0 173.8 172.7 171.5 170.3 169.1 168.0 167.0 165.9 164.9 164.0 163.0 162.1 161.3 162.6 161.8 161.0 160.1 159.3 158.4 157.5 156.7 155.8 155.0 154.1 153.4 152.3 151.8 150.9 150.0 149.2 148.4 147.4 146.6 145.7 144.8 143.9 142.9 142.0 (continued)
MRFG35002N6AT1 RF Device Data Freescale Semiconductor 7
Table 7. Common Source S - Parameters (VDD = 6 Vdc, IDQ = 65 mA, TC = 25C, 50 Ohm System) (continued)
f MHz 2800 2850 2900 2950 3000 3050 3100 3150 3200 3250 3300 3350 3400 3450 3500 3550 3600 3650 3700 3750 3800 3850 3900 3950 4000 4050 4100 4150 4200 4250 4300 4350 4400 4450 4500 4550 4600 4650 4700 4750 4800 4850 4900 4950 5000 S11 |S11| 0.890 0.887 0.888 0.886 0.886 0.885 0.882 0.881 0.879 0.877 0.876 0.875 0.874 0.873 0.870 0.869 0.867 0.867 0.865 0.863 0.861 0.860 0.858 0.856 0.854 0.853 0.851 0.849 0.847 0.845 0.842 0.841 0.838 0.836 0.836 0.832 0.828 0.830 0.826 0.830 0.827 0.827 0.828 0.824 0.824 141.2 140.1 138.9 137.6 136.4 135.1 133.8 132.5 131.1 129.8 128.4 127.0 125.6 124.1 122.6 121.1 119.7 118.1 116.6 115.0 113.5 111.9 110.3 108.6 107.0 105.3 103.5 101.7 99.8 97.9 96.0 94.1 92.0 89.9 87.7 85.3 83.3 80.6 78.3 75.9 72.9 70.4 67.5 64.8 61.8 |S21| 1.197 1.189 1.182 1.175 1.170 1.163 1.159 1.155 1.151 1.148 1.145 1.143 1.141 1.139 1.137 1.134 1.133 1.131 1.130 1.128 1.127 1.126 1.125 1.124 1.122 1.122 1.122 1.121 1.120 1.119 1.119 1.119 1.118 1.118 1.118 1.116 1.114 1.114 1.114 1.111 1.109 1.107 1.104 1.099 1.095 S21 14.0 12.4 10.8 9.1 7.5 5.8 4.1 2.4 0.7 - 1.0 - 2.7 - 4.5 - 6.3 - 8.0 - 9.8 - 11.6 - 13.4 - 15.2 - 17.0 - 18.8 - 20.7 - 22.5 - 24.4 - 26.3 - 28.3 - 30.2 - 32.1 - 34.2 - 36.2 - 38.3 - 40.4 - 42.6 - 44.7 - 47.0 - 49.3 - 51.7 - 54.0 - 56.4 - 58.8 - 61.3 - 64.0 - 66.6 - 69.2 - 71.8 - 74.6 |S12| 0.043 0.043 0.043 0.044 0.044 0.045 0.045 0.046 0.046 0.047 0.047 0.048 0.048 0.049 0.049 0.050 0.050 0.051 0.051 0.052 0.052 0.053 0.053 0.054 0.054 0.055 0.055 0.056 0.057 0.057 0.057 0.058 0.058 0.059 0.060 0.060 0.061 0.061 0.062 0.062 0.063 0.063 0.064 0.064 0.064 S12 - 38.6 - 39.5 - 40.4 - 41.4 - 42.4 - 43.5 - 44.5 - 45.5 - 46.8 - 47.7 - 48.9 - 50.0 - 51.3 - 52.4 - 53.8 - 55.0 - 56.2 - 57.3 - 58.4 - 59.5 - 60.9 - 62.1 - 63.4 - 64.5 - 65.7 - 67.0 - 68.1 - 69.5 - 70.9 - 72.4 - 73.8 - 75.2 - 76.6 - 78.4 - 80.0 - 81.7 - 83.3 - 85.0 - 86.6 - 88.6 - 90.6 - 92.6 - 94.4 - 96.4 - 98.6 |S22| 0.667 0.663 0.661 0.658 0.656 0.652 0.649 0.645 0.642 0.638 0.634 0.630 0.627 0.624 0.620 0.616 0.612 0.609 0.605 0.602 0.598 0.595 0.591 0.588 0.585 0.582 0.579 0.575 0.572 0.569 0.566 0.563 0.559 0.557 0.553 0.550 0.547 0.542 0.539 0.535 0.532 0.529 0.525 0.522 0.518 S22 141.1 140.2 139.2 138.2 137.2 136.3 135.2 134.2 133.1 132.0 130.9 129.8 128.7 127.5 126.4 125.2 124.0 122.8 121.5 120.2 118.9 117.6 116.2 114.9 113.4 112.0 110.5 109.0 107.4 105.9 104.2 102.4 100.7 98.8 96.8 94.8 92.7 90.5 88.3 85.9 83.6 81.0 78.4 75.8 72.9
MRFG35002N6AT1 8 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
A F
3
0.146 3.71
0.095 2.41
0.115 2.92
B
D
1
2
R
L
0.115 2.92 0.020 0.51
4
N K Q
ZONE V
0.35 (0.89) X 45_" 5 _ 10_DRAFT
inches mm
SOLDER FOOTPRINT
DIM A B C D E F G H J K L N P Q R S U ZONE V ZONE W ZONE X INCHES MIN MAX 0.255 0.265 0.225 0.235 0.065 0.072 0.130 0.150 0.021 0.026 0.026 0.044 0.050 0.070 0.045 0.063 0.160 0.180 0.273 0.285 0.245 0.255 0.230 0.240 0.000 0.008 0.055 0.063 0.200 0.210 0.006 0.012 0.006 0.012 0.000 0.021 0.000 0.010 0.000 0.010 MILLIMETERS MIN MAX 6.48 6.73 5.72 5.97 1.65 1.83 3.30 3.81 0.53 0.66 0.66 1.12 1.27 1.78 1.14 1.60 4.06 4.57 6.93 7.24 6.22 6.48 5.84 6.10 0.00 0.20 1.40 1.60 5.08 5.33 0.15 0.31 0.15 0.31 0.00 0.53 0.00 0.25 0.00 0.25
U H
4
P C
Y
Y
E
ZONE W
G
RF Device Data Freescale Semiconductor
EEEEEE E EEEE E EEEEEE E EEEEEE EEE EEEEEE E
1 3 ZONE X
2
NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1984. 2. CONTROLLING DIMENSION: INCH 3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W, AND X. STYLE 1: PIN 1. 2. 3. 4. DRAIN GATE SOURCE SOURCE
S
VIEW Y - Y
CASE 466 - 03 ISSUE D PLD- 1.5 PLASTIC
MRFG35002N6AT1 9
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 1 Date Dec. 2007 Dec. 2008 * Initial Release of Data Sheet * Removed "Operating Case Temperature Range" from Maximum Ratings table so that the maximum channel temperature rating is the limiting thermal design criteria and not the case temperature range, p. 1 Description
MRFG35002N6AT1 10 RF Device Data Freescale Semiconductor
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MRFG35002N6AT1
Document Number: RF Device Data MRFG35002N6A Rev. 1, 12/2008 Freescale Semiconductor
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